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moncler outlet pH值对LAP晶&

 
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PostPosted: Sun 10:40, 03 Apr 2011    Post subject: moncler outlet pH值对LAP晶&

pH值对LAP晶体生长速率的影响
一288017.5xI6x7.504007064284041.35—3I9o1Sx15x5I80.7005229363760一10I5xI5x&50盟052052∞4253800-35O012x1lxi50180A0咀37由表1可作出LAP各晶轴平均生长速度与pH值的关系曲线,如图2所示由图2可知,在DH=4.58处LAP晶体三种轴向均有最大的生长速率,且在4.48-4.61之间生长速率均高于其它pH二值时的生长速率,[link widoczny dla zalogowanych],即4.48—4.6l可确定E为LAP晶体生长的最佳pH值区间。从i表l可看出,在这个区间内晶体生长周魁期是最短的,仅1O天左右。并撂3pH值影响晶体生长速率的理论解释L一精氨酸分子和磷酸分子在水溶田2LAP各量轴平均生长速率与阻值关系液中均存在着三级离解平衡一(H2N)cNH(CHcH(NHCOOH部NcNH㈣H(NHCOO一+H①一U(H)JHcH(NCOO一口JH㈣1j删oo一+H②(H~N)+CNH(CH2),CHNH2COO一H(CH3CHNH2Coo一+H③NHKI1.5x10~KⅡ1x10一KⅢ6.310一Ha'O4H:,POg+HKI=7.6x10~④HJ'O:i-ieo~一+HK=6.2x10~⑤“¨n吣¨。第3斯pH值对LAP晶体生长建率的影响螽畦棒删一一+HK_4_410由上离解常数得到二者不同pH值下的分布曲线,如图3、图4所示,[link widoczny dla zalogowanych]。图3L一精氨盛的一l曲线6ImN)~*CNH(a-D,CHfNH,)+OOOH棚田0哪0田l硼O00一盐0珊旧j)Ⅱ删)o‘64:N啊(0I口∞0一NH艇谣格求@pH田4HJ'O.的一硼曲线H,PqFIg'0;Hp0:‘Po:‘由图3、图4可看出,LAP晶体纯水饱和溶液中主要存在着HO和(HcNHcH,cHjH’COO一两种型体.因此在纯水中LAP将发生如下电离王)cNH㈣3cH(NHCOO一·H0·Hp=I-I:'O~+H+CNHa娜COO一⑦口·c》c》K,口’l=、,一百:3.87×l0一.同样1对于Po其叫]=、厂■—=2.19xl0一~ol/1,则溶液的氢离子浓度近似为:阻]§=阻]+阻y[H】=3.87xl0一+2.19l0一=2.577xi0一~ol/1,即pH=4.59,[link widoczny dla zalogowanych],这是LP晶体生长中理论计算的最佳pH值,而这恰好同实驶测定的事实相吻合,说明LAP晶体生长的最佳pH范围是可靠的、准确的。参考文赫】尹鑫等,L晶体全部压电系散的测量.人工晶体学报.19(2)199~t772蒋民华.LAP晶体生长特性的研究,[link widoczny dla zalogowanych],工晶体学报,28(2)1993:2183L_NRa~kovich_etaL。Studyofthegmwth曲nbm,啦Jof.oGIow山》(112)1991:1834许东,[link widoczny dla zalogowanych],关于LP晶体的分于基团和主要性能关系的研究.山东大学学报,(21)19~6:1THEEFFECTOFpHVALUESONLAPCRYSTALGRoWTHWuHongmoLinHong(I-I~qomgNongk~T£舢QiangLiangshengZhuJunTherelationofLAP~ysml'sgrowthmtevariedwithpHdamofsolutionhasbeenstudiedinthispaperFinally.theoptimumpHdatafortherapidgrowthofLAPcr~alisgivenKeyworfls:LAP口ystal;pHdata"Gxowthofm'ysta1.
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